Determination of complement to the value of thermal resistance of power semiconductor devices

Authors

DOI:

https://doi.org/10.15588/1607-6761-2010-2-8

Keywords:

power semiconductor device, pulse mode, thermal resistance, determination of complement, junction temperature

Abstract

The author justifies the procedure for determining a complement to the value of thermal resistance of a direct current semiconductor device which permits to determine a maximum temperature of the device junction when loaded by current pulses.

References

Phase Control Thyristors. Databook. Data Sheet. User’s Guide [Електронний ресурс]: пояснення до параметрів та характеристик тиристорів. ABB Semiconductors AG, корегування 01.03.1999 – Електронні данні (1 файл: 1,06 МБ). – Lenzburg, ABB Switzerland, 1998. Режим доступу: http://search-ext.abb.com/library/Download.aspx? DocumentID=pctsek3&LanguageCode= en&DocumentPartID=&Action=Launch, вільний, – Загол. з екрану. – Англ.

Тиристоры низкочастотные таблеточного исполнения. [Електронний ресурс]: технические данные тиристоров / ОАО «Электровыпрямитель». – Электрон. дан. (1 файл). – Россия, Саранск, «Электровыпрямитель», 2009. – Режим доступа: http://www.elvpr.ru/poluprovodnikprib/tiristory/ nizkochast_tabl.php (свободный). – Загл. с экрана.

Phase Control Thyristors. Data Sheet. [Електронний ресурс]: параметри та характеристики тиристорів. ABB Semiconductors AG. – Електронні данні (1 файл). – Lenzburg, ABB Switzerland, 1998. Режим доступу: http://www.abb.com/product/db0003db004291/c12573e7003304adc1256b820064c0b3.aspx?productLanguage=ru&country=UA&tabKey=2, вільний, - Загол. з екрану. – Англ.

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How to Cite

Ostrenko, V. S. (2010). Determination of complement to the value of thermal resistance of power semiconductor devices. Electrical Engineering and Power Engineering, (2), 49–53. https://doi.org/10.15588/1607-6761-2010-2-8

Issue

No. 2 (2010): Electrical Engineering and Power Engineering

Section

Electrotechnics

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Copyright (c) 2017 V.S. Ostrenko

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